Prof. Dr. Ulrich Hilleringmann

Kontakt

Leiter - Professor

Telefon:

+49 5251 60-2225

Fax:

+49 5251 60-5913

E-Mail:

hilleringmann(at)sensorik.upb(dot)de

Büro:

P1.3.03

Sprechzeiten:

Nach Vereinbarung

Web:

Homepage

Besucher:

Pohlweg 47-49
33098 Paderborn

Center for Optoelectronics and Photonics (CeOPP)

Stellvertretender Sprecher - Professor

VCard

Fraunhofer-Institut für Elektronische Nanosysteme (ENAS)

Leiter - Professor - Projektkoordination mit der Universität Paderborn

VCard

Sonstiges
Seit 10/1999	Prof. Dr.-Ing. habil. Ruf an das Fachgebiet Sensorik der Universität Paderborn
10/1994 - 10/1999	Dr.-Ing. habil. Leiter der CMOS-Entwicklung in der Abteilung Elektrotechnik der Universität Dortmund
07/1988 - 10/1994	Dr.-Ing. habil. Habilitation in der Abteilung Elektrotechnik der Universität Dortmund
01/1986 - 06/1988	Dr.-Ing. Promotion in der Abteilung Elektrotechnik der Universität Dortmund
05/1984 - 12/1985	Dipl.-Ing. Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme, Duisburg
10/1978 - 04/1984	Dipl.-Ing. Studium Diplom-Physik an der Universität Paderborn

Seit 10/1999	Prof. Dr.-Ing. habil. Ruf an das Fachgebiet Sensorik der Universität Paderborn
10/1994 - 10/1999	Dr.-Ing. habil. Leiter der CMOS-Entwicklung in der Abteilung Elektrotechnik der Universität Dortmund
07/1988 - 10/1994	Dr.-Ing. habil. Habilitation in der Abteilung Elektrotechnik der Universität Dortmund
01/1986 - 06/1988	Dr.-Ing. Promotion in der Abteilung Elektrotechnik der Universität Dortmund
05/1984 - 12/1985	Dipl.-Ing. Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme, Duisburg
10/1978 - 04/1984	Dipl.-Ing. Studium Diplom-Physik an der Universität Paderborn

Liste im Research Information System öffnen

2023

LoRa Transceiver for Load Monitoring and Control System in Microgrids

I. Mwammenywa, D. Petrov, P. Holle, U. Hilleringmann, in: 2022 International Conference on Engineering and Emerging Technologies (ICEET), IEEE, 2023

DOI

2022

LoRa-based Demand-side Load Monitoring and Management System for Microgrids in Africa

I. Mwammenywa, G.M. Kagarura, D. Petrov, P. Holle, U. Hilleringmann, in: 2021 International Conference on Electrical, Computer and Energy Technologies (ICECET), IEEE, 2022

DOI

Far-field Calculation from magnetic Huygens Box Data using the Boundary Element Method

C. Marschalt, D. Schroder, S. Lange, U. Hilleringmann, C. Hedayat, H. Kuhn, D. Sievers, J. Forstner, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI

Detection of Defects on Irregularly Structured Surfaces using Supervised and Semi-Supervised Learning Methods

T. Sander, S. Lange, U. Hilleringmann, V. Geneis, C. Hedayat, H. Kuhn, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI

Modeling and Characterization of a 3D Environment for the Design of an Inductively Based Locating Method by Coil Couplings

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI

Modeling and Characterization of a 3D Environment for the Design of an Inductively Based Locating Method by Coil Couplings

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI

Modeling and Characterization of a 3D Environment for the Design of an Inductively Based Locating Method by Coil Couplings

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI

2021

Adaptation and Optimization of Planar Coils for a More Accurate and Far-Reaching Magnetic Field-Based Localization in the Near Field

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI

Low-Cost NB-IoT Microgrid Power Quality Monitoring System

D. Petrov, K. Kroschewski, I. Mwammenywa, G.M. Kagarura, U. Hilleringmann, in: 2021 IEEE Sensors, IEEE, 2021

DOI

Microcontroller Firmware Design for Industrial Wireless Sensors

D. Petrov, K. Kroschewski, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI

Influence of electrode metallization on thin-film transistor performance

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 IEEE AFRICON, IEEE, 2021

DOI

Detection of Defects on Irregular Structured Surfaces by Image Processing Methods for Feature Extraction

T. Sander, S. Lange, U. Hilleringmann, V. Geneis, C. Hedayat, H. Kuhn, F. Gockel, in: 2021 22nd IEEE International Conference on Industrial Technology (ICIT), IEEE, 2021

DOI

Development of Methods for Coil-Based Localization by Magnetic Fields of Miniaturized Sensor Platforms in Bioprocesses

S. Lange, D. Schroder, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2021 22nd IEEE International Conference on Industrial Technology (ICIT), IEEE, 2021

DOI

ZnO nanoparticle films as active layer for thin film transistors

U. Hilleringmann, in: Nanostructured Zinc Oxide, Elsevier, 2021

DOI

Complementary Inverter Circuits on Flexible Substrates

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI

Integration Process for Self-aligned Sub-µm Thin-Film Transistors for Flexible Electronics

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS), IEEE, 2021

DOI

A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

I.R. Kaufmann, O. Zerey, T. Meyers, J. Reker, F. Vidor, U. Hilleringmann, Nanomaterials (2021), 11(5), 1188

Abstract

DOI

<jats:p>Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.</jats:p>

Complementary Inverter Circuits on Flexible Substrates

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI

Local Power Control using Wireless Sensor System for Microgrids in Africa

U. Hilleringmann, D. Petrov, I. Mwammenywa, G.M. Kagarura, in: 2021 IEEE AFRICON, IEEE, 2021

DOI

The Viability of a Non-Flow Capacitive Biosensing Microsystem for Whole Cell Counting

G. Andrews, U. Hilleringmann, T. Joubert, in: 2021 IEEE AFRICON, IEEE, 2021

DOI

The Viability of a Non-Flow Capacitive Biosensing Microsystem for Whole Cell Counting

G. Andrews, U. Hilleringmann, T. Joubert, in: 2021 IEEE AFRICON, IEEE, 2021

DOI

2020

Investigation of the Surface Equivalence Principle on a Metal Surface for a Near-Field to Far-Field Transformation by the NFS3000

S. Lange, D. Schroder, C. Hedayat, C. Hangmann, T. Otto, U. Hilleringmann, in: 2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE, IEEE, 2020

DOI

27th European Solid-State Device Research Conference

U. Hilleringmann, IEEE, 2020

DOI

Designing Mixed-Signal PLLs regarding Multiple Requirements taking Non-Ideal Effects into Account

C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), IEEE, 2020

DOI

Inductive Locating Method to Locate Miniaturized Wireless Sensors within Inhomogeneous Dielectrics

S. Lange, D. Schroder, C. Hedayat, T. Otto, U. Hilleringmann, in: 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), IEEE, 2020

DOI

Water-based primary cell for powering of wireless sensors

D. Petrov, U. Hilleringmann, in: 2020 IEEE SENSORS, IEEE, 2020

DOI

2019

Self-aligned organic thin-film transistors for flexible electronics

T. Meyers, J. Reker, J. Temme, F.F. Vidor, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Inorganic p-channel thin-film transistors using CuO nanoparticles

J. Reker, T. Meyers, F..F. Vidor, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Nanoparticles and organic semiconductors for flexible electronics

U. Hilleringmann, J. Reker, F.F. Vidor, T. Meyers, T..H. Joubert, P. Bezuidenhout, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Improved organic thin-film transistor performance by dielectric layer patterning

J. Temme, T. Meyers, J. Reker, F.F. Vidor, J. Vollbrecht, H. Kitzerow, J. Paradies, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Mechanical deformation on nanoparticle-based thin-film transistors

F.F. Vidor, T. Meyers, J. Reker, K. Müller, G.I. Wirth, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Oxygen detection with zinc oxide nanoparticle structures

T. Schwabe, A. Balke, P. Bezuidenhout, J. Reker, T. Meyers, T. Joubert, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Characterization of inkjet-printed dielectric on different substrates

J. Kruger, P.H. Bezuidenhout, U. Hilleringmann, T. Joubert, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

Method of superposing a multiple driven magnetic field to minimize stray fields around the receiver for inductive wireless power transmission

S. Lange, M. Bueker, D. Sievers, C. Hedayat, J. Foerstner, U. Hilleringmann, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4

Characterization of H-field Probes regarding Unwanted Field Suppression using Different Calibration Structures

D. Schroeder, C. Hangmann, C. Hedayat, T. Otto, U. Hilleringmann, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4

Wireless power supply for a RFID based sensor platform

M. Schmidt, D. Petrov, C. Hedayat, U. Hilleringmann, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4

Characterization of inkjet-printed dielectric on different substrates

J. Kruger, P.H. Bezuidenhout, U. Hilleringmann, T. Joubert, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI

RFID based sensor platform for industry 4.0 application

D. Petrov, M. Schmidt, U. Hilleringmann, C. Hedayat, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4

2018

Silizium-Halbleitertechnologie

U. Hilleringmann, Springer Fachmedien Wiesbaden, 2018

DOI

Ätztechnik

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2018

DOI

Time domain electrical characterization in zinc oxide nanoparticle thin-film transistors

T.E. Becker, F.F. Vidor, G.I. Wirth, T. Meyers, J. Reker, U. Hilleringmann, in: 2018 IEEE 19th Latin-American Test Symposium (LATS), IEEE, 2018

DOI

Time domain electrical characterization in zinc oxide nanoparticle thin-film transistors

T.E. Becker, F.F. Vidor, G.I. Wirth, T. Meyers, J. Reker, U. Hilleringmann, in: 2018 IEEE 19th Latin-American Test Symposium (LATS), IEEE, 2018

DOI

Oxidation des Siliziums

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2018

DOI

Liquid crystalline dithienothiophene derivatives for organic electronics

J. Vollbrecht, P. Oechsle, A. Stepen, F. Hoffmann, J. Paradies, T. Meyers, U. Hilleringmann, J. Schmidtke, H. Kitzerow, Organic Electronics (2018), 61, pp. 266-275

DOI

2017

Surface Cleaning and Modification by High Intense UV-Irradition for TiO2 Nanoparticle Films in Dye Sensitized Solar Cells

A. Kleine, U. Hilleringmann, Renewable Energy and Power Quality Journal (2017), pp. 102-107

DOI

Low-voltage C 8 -BTBT thin-film transistors for flexible electronics

T. Meyers, F.F. Vidor, C. Puls, U. Hilleringmann, Materials Today: Proceedings (2017), 4, pp. S232-S236

DOI

Zinc Oxide Transistors

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI

Deposition of ZnO nanoparticles for thin-film transistors by doctor blade process

J. Reker, T. Meyers, F.F. Vidor, U. Hilleringmann, in: 2017 IEEE AFRICON, IEEE, 2017

DOI

Design and Implementation of a High Temperature Control Monitoring Applied to Micro Thermoelectric Generators

S. Jucá, P. Carvalho, R. Pereira, D. Petrov, U. Hilleringmann, Renewable Energy and Power Quality Journal (2017), pp. 712-717

DOI

Increasing the Efficiency of Solar Cells by Combining Silicon- and Dye Sensitized Devices

B. Ohms, A. Kleine, U. Hilleringmann, Renewable Energy and Power Quality (2017), pp. 469-473

DOI

Self-aligned ZnO nanoparticle-based TFTs for flexible electronics

F.F. Vidor, G.I. Wirth, T. Meyers, J. Reker, U. Hilleringmann, in: 2017 IEEE AFRICON, IEEE, 2017

DOI

Conclusion and Future Perspectives

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI

TEGs as self-sufficient power supply for sensors and microelectromechanical systems

M. Schönhoff, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2017

DOI

Complementary field-effect transistors for flexible electronics

U. Hilleringmann, F.F. Vidor, T. Meyers, in: SPIE Proceedings, SPIE, 2017

DOI

Mass production of magnesium silicide as a TEG material

M. Schonhoff, U. Hilleringmann, J. de Boor, in: 2017 IEEE AFRICON, IEEE, 2017

DOI

ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics

F.F. Vidor, G.I. Wirth, U. Hilleringmann, Springer International Publishing, 2017

DOI

Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics

F.F. Vidor, T. Meyers, K. Müller, G.I. Wirth, U. Hilleringmann, Solid-State Electronics (2017), 137, pp. 16-21

DOI

Organic Thin-Film Transistors for AMOLED Applications

T. Meyers, J. Vollbrecht, F. Vidor, J. Reker, H. Kitzerow, U. Hilleringmann, in: IEEE Xplore, MikroSystemTechnik 2017, IEEE, 2017, pp. 1-4

Improvements

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI

Integration of ZnO nanoparticle transistors on freestanding flexible substrates

F.F. Vidor, T. Meyers, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2017

DOI

Organic Thin-Film Transistors for AMOLED Applications

T. Meyers, J. Vollbrecht, F. Vidor, J. Reker, H. Kitzerow, U. Hilleringmann, in: MikroSystemTechnik 2017; Congress, 2017, pp. 1-4

2016

Event Driven Modeling and Characterization of the Second Order Voltage Switched Charge Pump PLL

E. Ali, C. Hangmann, C. Hedayat, F. Haddad, W. Rahajandraibe, U. Hilleringmann, IEEE Transactions on Circuits and Systems I: Regular Papers (2016), 63(3), pp. 347-358

DOI

Influence of Traps on the Characteristics of ZnO Nanoparticles Thin-Film Transistors

F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, in: Micro-Nano-Integration; 6. GMM-Workshop, 2016, pp. 1-6

Self-aligning integration technique for organic electronics

T. Meyers, F.F. Vidor, S.F. Kaijage, U. Hilleringmann, in: Micro-Nano-Integration; 6. GMM-Workshop, 2016, pp. 1-4

Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics

T. Meyers, F.F. Vidor, K. Brassat, J.K. Lindner, U. Hilleringmann, Microelectronic Engineering (2016), 174, pp. 35-39

DOI

Microstructured Metal Layers in Dye Sensitized Solar Cells

A. Kleine, U. Hilleringmann, in: Micro-Nano-Integration; 6. GMM-Workshop, 2016, pp. 1-6

ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique

F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, Microelectronic Engineering (2016), 159, pp. 155-158

DOI

Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

F. Vidor, T. Meyers, U. Hilleringmann, Nanomaterials (2016), 6(9), 154

DOI

Organic Field-Effect and Nanoparticle Thin-Film Transistors: Static Model

A. Romero, J. Gonzalez, U. Hilleringmann, P. Gloesekoetter, in: ANALOG 2016; 15. ITG/GMM-Symposium, 2016, pp. 1-6

Influence of UV irradiation and humidity on a low-cost ZnO nanoparticle TFT for flexible electronics

F.F. Vidor, T. Meyers, U. Hilleringmann, G.I. Wirth, in: 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), IEEE, 2016

DOI

Improved rf design using precise 3d near-field measurements and near-field to far-field transformations

C. Hangmann, T. Mager, S. Khan, C. Hedayat, U. Hilleringmann, in: Smart System Integration-International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2016

High-Q whispering gallery microdisk resonators based on silicon oxynitride

T. Hett, S. Krämmer, U. Hilleringmann, H. Kalt, A. Zrenner, Journal of Luminescence (2016), 191, pp. 131-134

DOI

2015

Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

F. Vidor, T. Meyers, U. Hilleringmann, Electronics (2015), 4(3), pp. 480-506

DOI

Silicon Nanoparticles contacted by metal nanogaps for FET applications

K. Wolff, U. Hilleringmann, 2015

Nanometer Scale Electronic Device Integration Using Side-Wall Deposition and Etch-Back Technology

U. Hilleringmann, F. Assion, F.F. Vidor, G.I. Wirth, Journal of Machine to Machine Communications (2015), 1(3), pp. 197-214

DOI

Application of side-wall deposition and etch-back technology for nanometer scale device integration

U. Hilleringmann, F. Vidor, F. Assion, in: Proceedings of the 2nd Pan African International Conference on Science, Computing and Telecommunications (PACT 2014), IEEE, 2015

DOI

Extended event-driven modeling of a ΣΔ-fractional-N PLL including non-ideal effects

C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2014 21st IEEE International Conference on Electronics, Circuits and Systems (ICECS), IEEE, 2015

DOI

Fast and accurate event-driven simulation of a mixed-signal system using the example of a PLL

C. Hangmann, C. Hedayat, U. Hilleringmann, in: Proc. Int. Conf. Exhib. Integr. Issues Miniatured Syst., 2015

2014

Low temperature fabrication of a ZnO nanoparticle thin-film transistor suitable for flexible electronics

F. Vidor, G. Wirth, U. Hilleringmann, Microelectronics Reliability (2014), 54(12), pp. 2760-2765

DOI

Stability Analysis of a Charge Pump Phase-Locked Loop Using Autonomous Difference Equations

C. Hangmann, C. Hedayat, U. Hilleringmann, IEEE Transactions on Circuits and Systems I: Regular Papers (2014), 61(9), pp. 2569-2577

DOI

Anodized Aluminum as Effective and Cheap Alternative Substrate for Thermoelectric Generators

F. Assion, V. Geneiß, M. Schönhoff, C. Hedayat, U. Hilleringmann, in: Proceedings of the 11th European Conference on Thermoelectrics, Springer International Publishing, 2014, pp. 83–88

Abstract

The wide usage of thermoelectric generators (TEG) is still blocked by very high product costs. This paper presents anodized aluminum (Al) as an effective and cheap alternative for ceramics like alumina (Al2O3) or aluminum nitride (AlN). Al has a significantly higher thermal conductivity as both named ceramics. In addition, the lower thermal stability of Al is still high enough to work with bismuth telluride based modules, which are most common. To show the advantages of the changed substrate, finite element method (FEM) simulations were performed. These simulations show that by changing the cold side substrate material the temperature drop across the substrate is reduced by 60 K. This correlates to a theoretical power gain of more than 20 {%}. Furthermore, Al can be shaped much easier than a ceramic material. The biggest advantage is obviously the price. Anodized Al is around twenty times cheaper than Al2O3. To demonstrate the easy fabrication of the proposed substrate, samples were prepared only with widely used processes like those used for conventional printed circuit boards.

A Flexible Measurement System for the Characterization of Thermoelectric Materials

M. Schönhoff, F. Assion, U. Hilleringmann, in: Proceedings of the 11th European Conference on Thermoelectrics, Springer International Publishing, 2014, pp. 53–60

Abstract

The figure of merit needs to be determined to rate the quality of thermoelectric materials (TM). Therefore, it is necessary to measure all involved parameters—the Seebeck coefficient (S), the thermal conductivity ($\lambda$), and the electrical conductivity ($\sigma$).

Replacing TCO electrodes in dye sensitized solar cells by metal grids

U. Hilleringmann, A. Kleine, in: SPIE Proceedings, SPIE, 2014

DOI

Lithografie

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2014

DOI

Random telegraph signal in nanoparticulated ZnO thin-film transistors

F. Vidor, G. Wirth, U. Hilleringmann, in: The 40th International Conference on Micro and Nano Engineering (MNE2014), 2014

Embedded UHF RFID tag design process for rubber transmission belt using 3D model

K. Kanwar, T. Mager, U. Hilleringmann, V. Geneiss, C. Hedayat, in: 2014 IEEE RFID Technology and Applications Conference (RFID-TA), IEEE, 2014

DOI

Modeling and characterization of CP-PLL phase noise in presence of dead zone

C. Hangmann, I. Wullner, C. Hedayat, U. Hilleringmann, in: 2014 IEEE 12th International New Circuits and Systems Conference (NEWCAS), IEEE, 2014

DOI

Titanium disilicide as hot side metallization layer for thermoelectric generators

U. Hilleringmann, M. Schonhoff, F. Assion, in: 2013 Africon, IEEE, 2014

DOI

2013

Self-organization of nanospheres in trenches on silicon surfaces

K. Brassat, F. Assion, U. Hilleringmann, J.K.N. Lindner, physica status solidi (a) (2013), 210(8), pp. 1485-1489

DOI

Titanium Disilicide as High-Temperature Contact Material for Thermoelectric Generators

F. Assion, M. Schönhoff, U. Hilleringmann, Journal of Electronic Materials (2013), 42(7), pp. 1932-1935

DOI

Enhanced organic light-emitting diode based on a columnar liquid crystal by integration in a microresonator

O. Kasdorf, J. Vollbrecht, B. Ohms, U. Hilleringmann, H. Bock, H. Kitzerow, International Journal of Energy Research (2013), 38(4), pp. 452-458

DOI

Design and implementation of a measurement system for automatically measurement of electrical parameters of thermoelectric generators

D. Petrov, F. Assion, U. Hilleringmann, MRS Proceedings (2013), 1490, pp. 191-196

Abstract

DOI

<jats:title>ABSTRACT</jats:title><jats:p>The continues development of thermoelectric generators causes a permanent improvement of their characteristics. New types of thermoelectric generators can work at temperatures up to 1000 K. With this, special measurement equipment is needed to control the electrical parameters of the new developed specimens. The devices must be tested over the whole range of operating temperatures. For each temperature value a series of electrical measurements has to be performed. To establish the maximal output power of the thermoelectric generators, a load resistor with variable resistance has to be connected to the output of thermoelectric generator. The measurement system should measure the electrical current through the load resistor and the voltage over this resistor to determine the device parameters. A large amount of measurement data have to be collected and processed to evaluate the electrical characteristics of the specimen and to present them in graphical form, suitable for the comparison with others specimens.</jats:p>

Formation and Properties of TiSi<sub>2</sub> as Contact Material for High-Temperature Thermoelectric Generators

F. Assion, M. Schönhoff, U. Hilleringmann, MRS Proceedings (2013), 1490, pp. 97-102

Abstract

DOI

<jats:title>ABSTRACT</jats:title><jats:p>Thermoelectric generators (TEG) are capable of transforming waste heat directly into electric power. With higher temperatures the yield of the devices rises which makes high-temperature contact materials important. The formation of titanium disilicide (TiSi<jats:sub>2</jats:sub>) and its properties were analyzed and optimized for the use in TEG. Depending on a direct or an indirect transformation into the C54 crystal structure the process forms a layer with a resistivity of 20-22 μΩcm. Process gases influence the resistivity and result in difference of 20 %. The growing rate of TiSi<jats:sub>2</jats:sub>on silicon dioxide was determined; it shows a strong dependence on the used atmosphere and temperature. A maximum overgrowing length of 30 μm was found.</jats:p>

Electrical characterization of rubber mixture sheets based on a coaxial probe method in combination with 3D electromagnetic simulation model

K. Kanwar, C. Fischer, V. Geneiss, T. Mager, U. Ballhausen, C. Hedayat, U. Hilleringmann, in: 2012 IEEE International Conference on RFID-Technologies and Applications (RFID-TA), IEEE, 2013

DOI

Enhanced event-driven modeling of a CP-PLL with nonlinearities and nonidealities

C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2013 IEEE 56th International Midwest Symposium on Circuits and Systems (MWSCAS), IEEE, 2013

DOI

Resistivity reduction in flexible dye sensitized solar cells by UV irradiation and carbon nanotubes

U. Hilleringmann, B. Ohms, A. Kleine, in: 2013 IEEE International Conference on Industrial Technology (ICIT), IEEE, 2013

DOI

Characterization and Analysis of the Hysteresis in a ZnO Nanoparticle Thin-Film Transistor

F.F. Vidor, G. Wirth, F. Assion, K. Wolff, U. Hilleringmann, IEEE Transactions on Nanotechnology (2013), 12(3), pp. 296-303

DOI

Design and analysis of UHF RFID tag for a rubber transmission belt based on 3D electrical model

K. Kanwar, V. Geneiss, T. Mager, S. Scheele, U. Ballhausen, C. Hedayat, U. Hilleringmann, in: 2013 21st International Conference on Software, Telecommunications and Computer Networks - (SoftCOM 2013), IEEE, 2013

DOI

Designing output-power-optimized thermoelectric generators via analytic and finite element method modelling

F. Assion, C. Fischer, M. Schonhof, U. Hilleringmann, C. Hedayat, in: 2013 IEEE International Conference on Industrial Technology (ICIT), IEEE, 2013

DOI

Enhanced organic light-emitting diode based on a columnar liquid crystal by integration in a microresonator

O. Kasdorf, J. Vollbrecht, B. Ohms, U. Hilleringmann, H. Bock, H. Kitzerow, International Journal of Energy Research (2013), 38(4), pp. 452-458

DOI

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Prof. Dr. Ulrich Hilleringmann

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