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Digitale Infotage für Schüler*innen vom 06.-09. Februar 2023

Foto: Universität Paderborn, Adelheid Rutenburges

Prof. Dr. Ulrich Hilleringmann

Kontakt
Vita
Publikationen
Prof. Dr. Ulrich Hilleringmann

DFG Graduiertenkolleg Micro- and Nanostructures in Optoelectronics and Photonics

Mitglied - Professor - Projektleiter Im DFG-Graduiertenkolleg DFG Graduiertenkolleg "Micro- and Nanostructures in Optoelectronics and Photonics"

Sensorik (SEN)

Leiter - Professor

Telefon:
+49 5251 60-2225
Fax:
+49 5251 60-5913
Büro:
P1.3.03
Sprechzeiten:

Nach Vereinbarung

Web:
Besucher:
Pohlweg 47-49
33098 Paderborn

Center for Optoelectronics and Photonics (CeOPP)

Stellvertretender Sprecher - Professor

Fraunhofer-Institut für Elektronische Nanosysteme (ENAS)

Leiter - Professor - Projektkoordination mit der Universität Paderborn

Prof. Dr. Ulrich Hilleringmann
10/1999 - heute

Prof. Dr.-Ing. habil.

Ruf an das Fachgebiet Sensorik der Universität Paderborn

10/1994 - 10/1999

Dr.-Ing. habil.

Leiter der CMOS-Entwicklung in der Abteilung Elektrotechnik der Universität Dortmund

07/1988 - 10/1994

Dr.-Ing. habil.

Habilitation in der Abteilung Elektrotechnik der Universität Dortmund

01/1986 - 06/1988

Dr.-Ing.

Promotion in der Abteilung Elektrotechnik der Universität Dortmund

05/1984 - 12/1985

Dipl.-Ing.

Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme, Duisburg

10/1978 - 04/1984

Dipl.-Ing.

Studium Diplom-Physik an der Universität Paderborn


Liste im Research Information System öffnen

2023

LoRa Transceiver for Load Monitoring and Control System in Microgrids

I. Mwammenywa, D. Petrov, P. Holle, U. Hilleringmann, in: 2022 International Conference on Engineering and Emerging Technologies (ICEET), IEEE, 2023

DOI


New Quick And Easy Publication - Will be edited by LibreCat team

U. Hilleringmann, Quick And Easy Journal Title (2023)


New Quick And Easy Publication - Will be edited by LibreCat team

U. Hilleringmann, Quick And Easy Journal Title (2023)


LoRa Transceiver for Load Monitoring and Control System in Microgrids

I. Mwammenywa, D. Petrov, P. Holle, U. Hilleringmann, in: 2022 International Conference on Engineering and Emerging Technologies (ICEET), IEEE, 2023

DOI


2022

LoRa-based Demand-side Load Monitoring and Management System for Microgrids in Africa

I. Mwammenywa, G.M. Kagarura, D. Petrov, P. Holle, U. Hilleringmann, in: 2021 International Conference on Electrical, Computer and Energy Technologies (ICECET), IEEE, 2022

DOI


Far-field Calculation from magnetic Huygens Box Data using the Boundary Element Method

C. Marschalt, D. Schroder, S. Lange, U. Hilleringmann, C. Hedayat, H. Kuhn, D. Sievers, J. Forstner, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI


Far-field Calculation from magnetic Huygens Box Data using the Boundary Element Method

C. Marschalt, D. Schroder, S. Lange, U. Hilleringmann, C. Hedayat, H. Kuhn, D. Sievers, J. Forstner, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI


Detection of Defects on Irregularly Structured Surfaces using Supervised and Semi-Supervised Learning Methods

T. Sander, S. Lange, U. Hilleringmann, V. Geneis, C. Hedayat, H. Kuhn, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI


Modeling and Characterization of a 3D Environment for the Design of an Inductively Based Locating Method by Coil Couplings

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2022 Smart Systems Integration (SSI), IEEE, 2022

DOI


2021

Detection of Defects on Irregular Structured Surfaces by Image Processing Methods for Feature Extraction

T. Sander, S. Lange, U. Hilleringmann, V. Geneis, C. Hedayat, H. Kuhn, F. Gockel, in: 2021 22nd IEEE International Conference on Industrial Technology (ICIT), IEEE, 2021

DOI


Development of Methods for Coil-Based Localization by Magnetic Fields of Miniaturized Sensor Platforms in Bioprocesses

S. Lange, D. Schroder, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2021 22nd IEEE International Conference on Industrial Technology (ICIT), IEEE, 2021

DOI


A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

I.R. Kaufmann, O. Zerey, T. Meyers, J. Reker, F. Vidor, U. Hilleringmann, Nanomaterials (2021), 11(5), 1188

<jats:p>Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.</jats:p>


Influence of electrode metallization on thin-film transistor performance

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 IEEE AFRICON, IEEE, 2021

DOI


Local Power Control using Wireless Sensor System for Microgrids in Africa

U. Hilleringmann, D. Petrov, I. Mwammenywa, G.M. Kagarura, in: 2021 IEEE AFRICON, IEEE, 2021

DOI


Low-Cost NB-IoT Microgrid Power Quality Monitoring System

D. Petrov, K. Kroschewski, I. Mwammenywa, G.M. Kagarura, U. Hilleringmann, in: 2021 IEEE Sensors, IEEE, 2021

DOI


Adaptation and Optimization of Planar Coils for a More Accurate and Far-Reaching Magnetic Field-Based Localization in the Near Field

S. Lange, C. Hedayat, H. Kuhn, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI


Complementary Inverter Circuits on Flexible Substrates

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI


ZnO nanoparticle films as active layer for thin film transistors

U. Hilleringmann, in: Nanostructured Zinc Oxide, Elsevier, 2021

DOI


Complementary Inverter Circuits on Flexible Substrates

J. Reker, T. Meyers, F.F. Vidor, T. Joubert, U. Hilleringmann, in: 2021 Smart Systems Integration (SSI), IEEE, 2021

DOI


2020

Investigation of the Surface Equivalence Principle on a Metal Surface for a Near-Field to Far-Field Transformation by the NFS3000

S. Lange, D. Schroder, C. Hedayat, C. Hangmann, T. Otto, U. Hilleringmann, in: 2020 International Symposium on Electromagnetic Compatibility - EMC EUROPE, IEEE, 2020

DOI


Water-based primary cell for powering of wireless sensors

D. Petrov, U. Hilleringmann, in: 2020 IEEE SENSORS, IEEE, 2020

DOI


Designing Mixed-Signal PLLs regarding Multiple Requirements taking Non-Ideal Effects into Account

C. Hangmann, C. Hedayat, U. Hilleringmann, in: 2019 17th IEEE International New Circuits and Systems Conference (NEWCAS), IEEE, 2020

DOI


2019

Method of superposing a multiple driven magnetic field to minimize stray fields around the receiver for inductive wireless power transmission

S. Lange, M. Bueker, D. Sievers, C. Hedayat, J. Foerstner, U. Hilleringmann, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4


Wireless power supply for a RFID based sensor platform

M. Schmidt, D. Petrov, C. Hedayat, U. Hilleringmann, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4


Characterization of H-field Probes regarding Unwanted Field Suppression using Different Calibration Structures

D. Schroeder, C. Hangmann, C. Hedayat, T. Otto, U. Hilleringmann, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4


Self-aligned organic thin-film transistors for flexible electronics

T. Meyers, J. Reker, J. Temme, F.F. Vidor, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


Inorganic p-channel thin-film transistors using CuO nanoparticles

J. Reker, T. Meyers, F..F. Vidor, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


Oxygen detection with zinc oxide nanoparticle structures

T. Schwabe, A. Balke, P. Bezuidenhout, J. Reker, T. Meyers, T. Joubert, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


Characterization of inkjet-printed dielectric on different substrates

J. Kruger, P.H. Bezuidenhout, U. Hilleringmann, T. Joubert, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


RFID based sensor platform for industry 4.0 application

D. Petrov, M. Schmidt, U. Hilleringmann, C. Hedayat, T. Otto, in: Smart Systems Integration; 13th International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2019, pp. 1-4


Mechanical deformation on nanoparticle-based thin-film transistors

F.F. Vidor, T. Meyers, J. Reker, K. Müller, G.I. Wirth, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


Improved organic thin-film transistor performance by dielectric layer patterning

J. Temme, T. Meyers, J. Reker, F.F. Vidor, J. Vollbrecht, H. Kitzerow, J. Paradies, U. Hilleringmann, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


Nanoparticles and organic semiconductors for flexible electronics

U. Hilleringmann, J. Reker, F.F. Vidor, T. Meyers, T..H. Joubert, P. Bezuidenhout, in: Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, SPIE, 2019

DOI


2018

Liquid crystalline dithienothiophene derivatives for organic electronics

J. Vollbrecht, P. Oechsle, A. Stepen, F. Hoffmann, J. Paradies, T. Meyers, U. Hilleringmann, J. Schmidtke, H. Kitzerow, Organic Electronics (2018), 61, pp. 266-275

DOI


Time domain electrical characterization in zinc oxide nanoparticle thin-film transistors

T.E. Becker, F.F. Vidor, G.I. Wirth, T. Meyers, J. Reker, U. Hilleringmann, in: 2018 IEEE 19th Latin-American Test Symposium (LATS), IEEE, 2018

DOI


Silizium-Halbleitertechnologie

U. Hilleringmann, Springer Fachmedien Wiesbaden, 2018

DOI


Oxidation des Siliziums

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2018

DOI


Ätztechnik

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Springer Fachmedien Wiesbaden, 2018

DOI


2017

ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics

F.F. Vidor, G.I. Wirth, U. Hilleringmann, Springer International Publishing, 2017

DOI


Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics

F.F. Vidor, T. Meyers, K. Müller, G.I. Wirth, U. Hilleringmann, Solid-State Electronics (2017), 137, pp. 16-21

DOI


Complementary field-effect transistors for flexible electronics

U. Hilleringmann, F.F. Vidor, T. Meyers, in: SPIE Proceedings, SPIE, 2017

DOI


Self-aligned ZnO nanoparticle-based TFTs for flexible electronics

F.F. Vidor, G.I. Wirth, T. Meyers, J. Reker, U. Hilleringmann, in: 2017 IEEE AFRICON, IEEE, 2017

DOI


Organic Thin-Film Transistors for AMOLED Applications

T. Meyers, J. Vollbrecht, F. Vidor, J. Reker, H. Kitzerow, U. Hilleringmann, in: IEEE Xplore, MikroSystemTechnik 2017, IEEE, 2017, pp. 1-4


Conclusion and Future Perspectives

F.F. Vidor, G.I. Wirth, U. Hilleringmann, in: ZnO Thin-Film Transistors for Cost-Efficient Flexible Electronics, Springer International Publishing, 2017

DOI


Integration of ZnO nanoparticle transistors on freestanding flexible substrates

F.F. Vidor, T. Meyers, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2017

DOI


TEGs as self-sufficient power supply for sensors and microelectromechanical systems

M. Schönhoff, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2017

DOI


Mass production of magnesium silicide as a TEG material

M. Schonhoff, U. Hilleringmann, J. de Boor, in: 2017 IEEE AFRICON, IEEE, 2017

DOI


Organic Thin-Film Transistors for AMOLED Applications

T. Meyers, J. Vollbrecht, F. Vidor, J. Reker, H. Kitzerow, U. Hilleringmann, in: MikroSystemTechnik 2017; Congress, 2017, pp. 1-4


2016

Low-voltage DNTT-based thin-film transistors and inverters for flexible electronics

T. Meyers, F.F. Vidor, K. Brassat, J.K. Lindner, U. Hilleringmann, Microelectronic Engineering (2016), 174, pp. 35-39

DOI


Improved rf design using precise 3d near-field measurements and near-field to far-field transformations

C. Hangmann, T. Mager, S. Khan, C. Hedayat, U. Hilleringmann, in: Smart System Integration-International Conference and Exhibition on Integration Issues of Miniaturized Systems, 2016


Microstructured Metal Layers in Dye Sensitized Solar Cells

A. Kleine, U. Hilleringmann, in: Micro-Nano-Integration; 6. GMM-Workshop, 2016, pp. 1-6


ZnO nanoparticle thin-film transistors on flexible substrate using spray-coating technique

F.F. Vidor, T. Meyers, G.I. Wirth, U. Hilleringmann, Microelectronic Engineering (2016), 159, pp. 155-158

DOI


High-Q whispering gallery microdisk resonators based on silicon oxynitride

T. Hett, S. Krämmer, U. Hilleringmann, H. Kalt, A. Zrenner, Journal of Luminescence (2016), 191, pp. 131-134

DOI


Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

F. Vidor, T. Meyers, U. Hilleringmann, Nanomaterials (2016), 6(9), 154

DOI


2014

Titanium disilicide as hot side metallization layer for thermoelectric generators

U. Hilleringmann, M. Schonhoff, F. Assion, in: 2013 Africon, IEEE, 2014

DOI


2013

Enhanced organic light-emitting diode based on a columnar liquid crystal by integration in a microresonator

O. Kasdorf, J. Vollbrecht, B. Ohms, U. Hilleringmann, H. Bock, H. Kitzerow, International Journal of Energy Research (2013), 38(4), pp. 452-458

DOI


Design and analysis of UHF RFID tag for a rubber transmission belt based on 3D electrical model

K. Kanwar, V. Geneiss, T. Mager, S. Scheele, U. Ballhausen, C. Hedayat, U. Hilleringmann, in: 2013 21st International Conference on Software, Telecommunications and Computer Networks - (SoftCOM 2013), IEEE, 2013

DOI


Designing output-power-optimized thermoelectric generators via analytic and finite element method modelling

F. Assion, C. Fischer, M. Schonhof, U. Hilleringmann, C. Hedayat, in: 2013 IEEE International Conference on Industrial Technology (ICIT), IEEE, 2013

DOI


2011

Piezoelectric sensor array with evaluation electronic for counting grains in seed drills

S. Meyer zu Hoberge, U. Hilleringmann, C. Jochheim, M. Liebich, in: IEEE Africon '11, IEEE, 2011

DOI


2010

Organic Field-Effect-Transistors with Pentacene for radio-controlled-price-tag applications

C. Pannemannn, T. Diekmann, U. Hilleringmann, Advances in Radio Science (2010), 1, pp. 219-221

<jats:p>Abstract. This letter presents organic thin-film-transistors (OTFT) using the small organic molecule Pentacene targeting applications like radio controlled identification tags. Simple OTFTs as well as inverter circuits based on a pconducting silicon wafer substrate are presented. Comparing PECVD oxide and LTO as dielectric, only LTO deposited layers provide sufficient electrical stability. PECVD oxides show defects called “pin-holes", leading to short circuiting through the gate dielectrics. OTFTs of L=1µm/W=1000µm were prepared providing Ids = 61µA at –40Vds and –40Vgs, a subthreshold slope of 10.3 V/dec and an on-offratio of 102. The inverter circuits using insulated gate contacts switch from VA=–10V to VA=–3V output voltage when the input voltage is varied from VE=0V to VE=–8V at a supplied voltage of VB=–10V. </jats:p>


Low-Temperature Integration of Nanoparticulate Zinc Oxide FETs on Glass Substrate

F. Assion, K. Wolff, U. Hilleringmann, in: Proceedings of the European Solid State Device Research Conference (ESSDERC), Seville, Spain, 2010, pp. 17


A Resonance PLL-based Tracking System for Capacitive Sensors-MEMS/NEMS

C. Wiegand, C. Hangmann, C. Hedayat, U. Hilleringmann, Smart System Integration SSI 2010 (2010)


Telemetric surface acoustic wave sensor for humidity

M. Dierkes, U. Hilleringmann, Advances in Radio Science (2010), 1, pp. 131-133

<jats:p>Abstract. Surface acoustic wave sensors consist of a piezoelectric substrate with metal interdigital transducers (IDT) on top. The acoustic waves are generated on the surface of the substrate by a radio wave, as it is well known in band pass filters. The devices can be used as wireless telemetric sensors for temperature and humidity, transmitting the sensed signal as a shift of the sensor’s resonance frequency. </jats:p>


Macro-modelling via radial basis functionen nets

C. Wiegand, C. Fischer, R. Kazemzadeh, C. Hedayat, W. John, U. Hilleringmann, Advances in Radio Science (2010), 6, pp. 139-143

<jats:p>Abstract. By the rising complexity and miniaturisation of the device's dimensions, the density of the conductors increases considerably. Referring to this, locally transient interactions between single physical values become apparent. Therefore, for the investigation and optimisation of integrated circuits it is essential to develop suitable models and simulation surroundings which allow for memory and time-efficient calculation of the behaviour. By means of the dynamic reconstruction theory and the radial basis functions nets the so-called black box models are provided. The description of black box models is derived from the input and output behaviour or so-called time series of a dynamic system. Concerning the time series, the black box model adapts its parameters via the extended Kalman filter. This paper provides a modelling approach that enables fast and efficient simulations. </jats:p>


2008

Noise propagation for induced fast transient impulses on PCB-level

M. Taki, W. John, C. Hedayat, U. Hilleringmann, in: 2007 18th International Zurich Symposium on Electromagnetic Compatibility, IEEE, 2008

DOI


Analysis of Energy Transmission for Inductive Coupled RFID Tags

P. Scholz, C. Reinhold, W. John, U. Hilleringmann, in: 2007 IEEE International Conference on RFID, IEEE, 2008

DOI


2007

6I-3 Low-Cost Transceiver Unit for SAW-Sensors Using Customized Hardware Components

P. Scholz, M. Dierkes, U. Hilleringmann, in: 2006 IEEE Ultrasonics Symposium, IEEE, 2007

DOI


Antenna design of HF-RFID tags with high power requirement

P. Scholz, C. Reinhold, W. John, U. Hilleringmann, 2007


Nonlinear Identification of Complex Systems Using Radial Basis Function Networks and Model Order Reduction

C. Wiegand, C. Hedayat, W. John, L. Radic-Weissenfeld, U. Hilleringmann, in: 2007 IEEE International Symposium on Electromagnetic Compatibility, IEEE, 2007

DOI


2006

Encapsulating the active Layer of organic Thin-Film Transistors

C. Pannemann, T. Diekmann, U. Hilleringmann, U. Schurmann, M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, in: Polytronic 2005 - 5th International Conference on Polymers and Adhesives in Microelectronics and Photonics, IEEE, 2006

DOI


2005

Degradation of organic field-effect transistors made of pentacene

C. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research (2005), 19(7), pp. 1999-2002

<jats:p>This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>


Radiotracer measurements as a sensitive tool for the detection of metal penetration in molecular-based organic electronics

M. Scharnberg, J. Hu, J. Kanzow, K. Rätzke, R. Adelung, F. Faupel, C. Pannemann, U. Hilleringmann, S. Meyer, J. Pflaum, Applied Physics Letters (2005), 86(2), 024104

DOI


Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry

R. Scholz, A. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2005

DOI


Degradation of organic field-effect transistors made of pentacene

C. Pannemann, T. Diekmann, U. Hilleringmann, Journal of Materials Research (2005), 19(7), pp. 1999-2002

<jats:p>This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert <jats:italic>p</jats:italic>-type silicon wafers as the substrate and SiO<jats:sub>2</jats:sub> as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.</jats:p>


On the degradation of organic field-effect transistors

C. Pannemann, T. Diekmann, U. Hilleringmann, in: Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004., IEEE, 2005

DOI


Comparison between the charge carrier mobilities in pentacene OFET structures as obtained from electrical characterization and potentiometry

R. Scholz, A. Müller, F. Müller, I. Thurzo, B.A. Paez, L. Mancera, D.R.T. Zahn, C. Pannemann, U. Hilleringmann, in: SPIE Proceedings, SPIE, 2005

DOI


2004

Imprint structured organic thin film transistors as driving circuit in single-use sensor applications

U. Hilleringmann, C. Pannemann, in: Fifth International Symposium on Instrumentation and Control Technology, SPIE, 2004

DOI


Piezoresistive pressure sensors in CVD diamond for high-temperature applications

R. Otterbach, U. Hilleringmann, in: Fifth International Symposium on Instrumentation and Control Technology, SPIE, 2004

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Ätztechnik

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, 2004, pp. 65–90

In der Halbleitertechnologie werden die Materialien Siliziumdioxid, Siliziumnitrid, Polysilizium, Silizium, Aluminium sowie Wolfram und Titan mit ihren jeweiligen Metallsiliziden geätzt. Die Ätztechnik dient dabei zum ganzflächigen Abtragen eines Materials oder zum Übertragen der Struktur des lithografisch erzeugten Lackmusters in die darunter liegende Schicht. Für diese Aufgabe bieten sich einerseits nasschemische Ätzlösungen an, zum anderen eignen sich speziell entwickelte Trockenätzverfahren zur geforderten präzisen Strukturübertragung vom Lack in das Material.


2003

Masking and etching of silicon and related materials for geometries down to 25 nm

U. Hilleringmann, T. Vieregge, J. Horstmann, in: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003

DOI


Matching analysis of NMOS-transistors with a channel length down to 30 nm

J. Horstmann, U. Hilleringmann, K. Goser, in: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003

DOI


Negative differential resistance in ultrashort bulk MOSFETs

G. Wirth, U. Hilleringmann, J. Horstmann, K. Goser, in: IECON'99. Conference Proceedings. 25th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.99CH37029), IEEE, 2003

DOI


Nanometer scale organic thin film transistors with Pentacene

C. Pannemann, T. Diekmann, U. Hilleringmann, Microelectronic Engineering (2003), 67-68, pp. 845-852

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2002

Matching analysis of deposition defined 50-nm MOSFET's

J. Horstmann, U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices (2002), 45(1), pp. 299-306

DOI


Characterization of submicron NMOS devices due to visible light emission

I. Schönstein, J. Müller, U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 21(1-4), pp. 363-366

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Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon

U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 19(1-4), pp. 211-214

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Results of monolithic integration of optical waveguides, photodiodes and CMOS circuits on silicon

U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 19(1-4), pp. 211-214

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CMOS compatible micromachining by dry silicon-etching techniques

S. Adams, U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 19(1-4), pp. 191-194

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Optoelectronic system integration on silicon: waveguides, photodetectors, and VLSI CMOS circuits on one chip

U. Hilleringmann, K. Goser, IEEE Transactions on Electron Devices (2002), 42(5), pp. 841-846

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Mesoscopic transport phenomena in ultrashort channel MOSFETs

G. Wirth, U. Hilleringmann, J. Horstmann, K. Goser, Solid-State Electronics (2002), 43(7), pp. 1245-1250

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Reactive ion etching of CVD-diamond for piezoresistive pressure sensors

R. Otterbach, U. Hilleringmann, Diamond and Related Materials (2002), 11(3-6), pp. 841-844

DOI


Metallisierung und Kontakte

U. Hilleringmann, in: Silizium-Halbleitertechnologie, Vieweg+Teubner Verlag, 2002, pp. 131–151

Die Metallisierung stellt den elektrischen Kontakt zu den dotierten Gebieten der integrierten Schaltungselemente her und verbindet die einzelnen Komponenten eines Chips durch Leiterbahnen. Sie führt die Anschlüsse über weitere Leiterbahnen zum Rand des Chips und wird dort zu Kontaktflecken (“Pads”) aufgeweitet, die als Anschluss für die Verbindungsdrähte zwischen Chip und Gehäuse oder zum Aufsetzen von Messsonden für die Parametererfassung zum Schaltungstest auf ungesägten Scheiben dienen.


Nuclear radiation detectors on various type diamonds

F. Blum, A. Denisenko, R. Job, D. Borchert, W. Weber, J. Borany, U. Hilleringmann, W. Fahrner, in: IECON '98. Proceedings of the 24th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.98CH36200), IEEE, 2002

DOI


VLSI technologies for artificial neural networks

K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro (2002), 9(6), pp. 28-44

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VLSI technologies for artificial neural networks

K. Goser, U. Hilleringmann, U. Rueckert, K. Schumacher, IEEE Micro (2002), 9(6), pp. 28-44

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Applications and implementations of neural networks in microelectronics-overview and status

K. Goser, U. Hilleringmann, U. Rueckert, in: [1991] Proceedings, Advanced Computer Technology, Reliable Systems and Applications, IEEE Comput. Soc. Press, 2002

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Floating gate structures as nonvolatile analog memory cells in 1.0μm-LOCOS-CMOS technology with PZT dielectrica

A. Soennecken, U. Hilleringmann, K. Goser, Microelectronic Engineering (2002), 15(1-4), pp. 633-636

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A silicon based technology for monolithic integration of waveguides and VLSI CMOS circuits

U. Hilleringmann, K. Knospe, C. Heite, K. Schumacher, K. Goser, Microelectronic Engineering (2002), 15(1-4), pp. 289-292

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System integration of optical devices and analog CMOS amplifiers

E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits (2002), 29(8), pp. 1006-1010

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System integration of optical devices and analog CMOS amplifiers

E. Brass, U. Hilleringmann, K. Schumacher, IEEE Journal of Solid-State Circuits (2002), 29(8), pp. 1006-1010

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