Dr. Tobias Henksmeier

Optoelectronic materials and devices

Research Associate

Office Address:
Pohlweg 47-49
33098 Paderborn
Room:
P8.2.05

Publications

Latest Publications

Hybrid GaAs (111)/GaAs (100) PIN photodiodes for metasurface-assisted nonlinear upconversion detection

V. Spedt, F. Meier, R. Geromel, P. Mahler, T. Henksmeier, D. Reuter, T. Zentgraf, C. Meier, Optics Express 34 (2026).



Remote epitaxy of In(x)Ga(1-x)As(001) on graphene covered GaAs(001) substrates

T. Henksmeier, J.F. Schulz, E. Kluth, M. Feneberg, R. Goldhahn, A.M. Sanchez, M. Voigt, G. Grundmeier, D. Reuter, Journal of Crystal Growth 593 (2022).


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Teaching


Current Courses

  • Materialanalytik
  • Halbleiterepitaxie