Prof. Dr. Donat Josef As
- E-Mail:
- d.as@uni-paderborn.de
- Phone:
- +49 5251 60-5838
- Web:
- Homepage
- Office Address:
-
Pohlweg 47-49
33098 Paderborn - Room:
- P8.2.10
Publications
Latest Publications
Time-resolved pump–probe spectroscopic ellipsometry of cubic GaN. I. Determination of the dielectric function
E. Baron, R. Goldhahn, S. Espinoza, M. Zahradník, M. Rebarz, J. Andreasson, M. Deppe, D.J. As, M. Feneberg, Journal of Applied Physics 134 (2023).
Remote Epitaxy of Cubic Gallium Nitride on Graphene‐Covered 3C‐SiC Substrates by Plasma‐Assisted Molecular Beam Epitaxy
M. Littmann, D. Reuter, D.J. As, Physica Status Solidi (b) 260 (2023).
Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1–xN
M.F. Zscherp, S.A. Jentsch, M.J. Müller, V. Lider, C. Becker, L. Chen, M. Littmann, F. Meier, A. Beyer, D.M. Hofmann, D.J. As, P.J. Klar, K. Volz, S. Chatterjee, J. Schörmann, ACS Applied Materials & Interfaces 15 (2023) 39513–39522.
Selective Area Growth of Cubic Gallium Nitride in Nanoscopic Silicon Dioxide Masks
F. Meier, M. Littmann, J. Bürger, T. Riedl, D. Kool, J. Lindner, D. Reuter, D.J. As, Physica Status Solidi (b) (2022).
Optical evidence of many-body effects in the zincblende Al$_\mathrm{x}$Ga$_\mathrm{1-x}$N alloy system
E. Baron, M. Feneberg, R. Goldhahn, M. Deppe, F. Tacken, D.J. As, Journal of Physics D: Applied Physics (2021).
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Teaching
Current Courses
- Physikalisches Kolloquium
- Materials Physics and Analysis
- Materialanalytik
- Lab Project
- Aktuelle Probleme der Halbleiterepitaxie